Germanium-tin (GeSn) is attractive group-IV material with great optical properties as light emitting and receiving element. To apply such significant properties on photonic devices, the growth of GeSn films with high substitutional Sn concentration on insulating substrates is essential. In this work, we have investigated continuous wave laser annealing of amorphous …
(a) Determine the concentration of free electrons and holes in a sample of germanium at 300°K which has a concentration of donor atoms equal to 2times 10^{14} atoms/ cm^3 and a concentration of acceptor atom equal to 3times 10^{14} atoms/ cm^3. Is this p– or n-type germanium? In other words, is the conductivity due primarily to holes or to ...
the unusual concentration of germanium and other rare elements in certain European coals. A sample of ash from the Hartley coal of Newcastle, England, was shown by them to contain the high concentration of 1. 1 percent Ge. The average content of the richer samples studied by them was 0. 05 percent Ge in the ash. ...
Uses. Geology. Biology. Binary compounds. Compound properties. Element reactions. Germanium atoms have 32 electrons and the shell structure is 2.8.18.4. The ground state electron configuration of ground state gaseous neutral germanium is [ Ar ]. 3d10. 4s2. 4p2 and the term symbol is 3P0.
Intrinsic concentration (ni) is referred as the number of covalent bonds break at a given temperature per unit volume. It is a function of temperature, so as...
Equivalent molar concentration per liter. Germanium weighs 5.323 gram per cubic centimeter or 5 323 kilogram per cubic meter, i.e. density of germanium is equal to 5 323 kg/m³; at 20°C (68°F or 293.15K) at standard atmospheric pressure .
Furthermore, it was found that the mineral waters from Wysowa-Zdrój and Rymanów-Zdrój shows a strong positive correlation between germanium and bromine concentration (correlation coefficients R2 of 0.975 and 0.9242, respectively), and between germanium concentration and general mineralisation (R 2 of 0.9225 and 0.8726, respectively).
What is the ground-state electron configuration of the element germanium? Germanium is a semiconductor. The pure element was commonly doped with arsenic, gallium or other elements and used as a transistor in thousands of electronic applications. Germanium oxide has a high index of refraction and dispersion.
C. K. Maiti and G. A. Armstrong, Applications of Silicon-Germanium Heterostructure Devices, Chapter 2, IOP Pub., Bristol and Philadelphia (2001). Dislocations are therefore undesirable, particularly in thin Ge layers.
tinually increase with dopant concentration. The output signal of the detector is a function of the ratio p/P; thus, the signal out will have an optimum dopant concentration. The results of the theoretical investigation were then used to predict the optimum dopant concentration for zinc-doped germanium detectors in a well-defined integrating
Answer: Germanium ( Z = 32): The filling of electrons in an atom are based on Aufbau principle, Pauli's exclusion principle and Hund's rule of maximum multiplicity. In the ground state of the atom, the orbitals are filled in the order of increasing energy levels ( …
These end uses represented 85% of worldwide germanium consumption for 2000. World germanium consumption has been greater than primary production in recent years, but releases of germanium from government stockpiles and increased recycling have provided adequate supply. The yearend price for germanium in 2000 was $1,150 per kilogram.
germanium (Ge), a chemical element between silicon and tin in Group 14 (IVa) of the periodic table, a silvery-gray metalloid, intermediate in properties between the metals and the nonmetals. Although germanium was not discovered until 1886 by Clemens Winkler, a German chemist, its existence, properties, and position in the periodic system had been predicted in 1871 by the …
Equivalent molar concentration per liter. Germanium dioxide, amorphous form weighs 3.637 gram per cubic centimeter or 3 637 kilogram per cubic meter, i.e. density of germanium dioxide, amorphous form is equal to 3 637 kg/m³; at 25°C (77°F …
The influence of different Germanium dioxide concentration on the structural, thermal, optical and spectroscopic properties of Er 3+ doped tellurite glasses was carefully investigated. The glasses were prepared by melt-quenching technique. ... The absorption bands corresponding to ground state 4 I 15/2 absorption of 4 I 13/2, 4 I 11/2, 4 I 9/2, ...
Germanium (Ge), intrinsic carrier concentration Book Title Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties Book DOI 10.1007/b80447 Chapter DOI 10.1007/10832182_503 Part of ...
An official website of the United States government. Here's how you know
Uses. Geology. Biology. Binary compounds. Compound properties. Element reactions. Germanium atoms have 32 electrons and the shell structure is 2.8.18.4. The ground state electron configuration of ground state …
Ge concentration of the sintered alloys was obtained by XRD peak position of SiGe(111)[7]. ... Germanium concentration in the alloy is 30%. As shown, the sheet resistivity in the alloy can be changed by three orders of magnitude simply by changing the amount of diborane flow. Low-resistivity films can be obtained with resistivities comparable ...
The hole Hall mobility versus hole concentration. Experimental points: data from three References (Golikova et al. [1961]). The hole Hall factor versus temperature for high purity p-Ge (Morin [1954]). Transport Properties in High Electric …
Concentration Effect of Germanium Dioxide on the Spectroscopic Properties and Laser Performance of Er 3+ /Yb 3+ Co-Doped Phosphate Glasses. Bingtao Zhang 1, Zigang Zhao 1, ... All the absorption bands correspond to transitions of Er 3+ from the 4 I 15/2 ground state to the various excited levels except the strong and broad absorption band ...
oo o 00 o o 1)ro cx-p •HPXI CU •upx! C-HOOP OnjPP O cp •hx:inEO >H-PCUro •H-HOCUH w* rrjfln Pi ro CTJ•peg •HCU-iP. 0T3cua.o P,oEu-i C Cro XCOUroCOC •P CU P.p cuE cHXI-H 11
Current annual production of refined germanium is led by China at 85,000 tons, while estimates place U.S. reserves near 2,500 tons. Reported production of germanium in the U.S. is limited to one site, the Apex mine in Washington county, Utah. The Apex mine produced gallium (Ga) and germanium as primary products during the mid-1980s.
Germanium oxide has a high index of refraction and dispersion. This makes it suitable for use in wide-angle camera lenses and objective lenses for microscopes. This is now the major use for this element. Electronic configuration: [Ar] 3d 1 0 4s 2 4p 2 …
2.2.Sample collection and preparation. Samples were primarily collected in 2005 from the surface of six chat piles (Schaider et al., 2007).Gravel-sized particles (>∼cm) were brushed away before sampling ∼500–1000 g of the underlying chat (∼2–4 cm depth) from an ∼100 cm 2 area. Samples from three of these piles (A, B, and D) were analyzed by …
(a) Find the concentration of holes and electrons in a p-type germanium at 300°K if the conductivity is 100 (Ω cm) −1. Assume that the conductivity due to electrons is negligible as compared to that due to holes. (b) Determine the
Germanium is the 32nd element in the periodic table and its symbol is 'Ge'. The germanium(Ge) electron configuration will be 1s2 2s2 2p6 3s2 3p6 3d10 4s2 4p2. ... In the germanium ground-state electron configuration, two electrons of the 4p orbital are located in the 4p x and 4p y sub-orbitals. The p-orbital has three sub-orbitals.
Germanium ( Ge) is located in the fourth row, group 14 of the periodic table, and has an atomic number of 32. This implies that the neutral Ge atom's electron configuration must account for 32 electrons. So, Ge:1s22s22p63s23p64s23d104p2 An alternative way of writing the electron configuration for Ge is by using the noble gas shorthand notation.
Germanium is a chemical element with the symbol Ge and atomic number 32. It is a lustrous, hard-brittle, grayish-white metalloid in the carbon group, chemically similar to its group neighbors silicon and tin.Pure germanium is a semiconductor with an appearance similar to elemental silicon. Like silicon, germanium naturally reacts and forms complexes with oxygen in nature.
atomic weight: 72.59. melting point: 937.4° C (1,719.3° F) boiling point: 2,830° C (5,130° F) density: 5.323 g/cm3. oxidation states: +2, +4. Because it seldom appears in high concentration, germanium was discovered comparatively late in the history of chemistry. Germanium ranks near fiftieth in the relative abundance of the elements in the ...
Ground state electron configuration of germanium is 1s 2 2s 2 2p 6 3s 2 3p 6 3d 10 4s 2 4p 2. In the germanium ground-state electron configuration, two electrons of the 4p orbital are located in the 4p x and 4p y sub-orbitals. The p-orbital has three sub …
So, in order to find out the concentration of holes and electrons in a sample of germanium and silicon which have the concentration of donor atoms equals to 〖10〗^15 〖cm〗^(-3). We first need to find out the intrinsic carrier concentration of silicon and germanium at room temperature (T= 300K).
Today, germanium is primarily obtained from the smelting of zinc ores and from the byproducts of burning certain types of coal. Jefferson Lab, U.S. Department of Energy From the Latin word Germania, Germany. Mendeleev predicted the existence of Germanium in 1871 as ekasilicon, and the element was discovered by Winkler in 1886.
Band structure and carrier concentration of Germanium (Ge) Band structure and carrier concentration Basic Parameters Temperature Dependences Dependences on Hydrostatic Pressure Energy Gap Narrowing at High Doping Levels Effective Masses and Density of States Donors and Acceptors Basic Parameters Band structures of Ge. E g = 0.66 eV E x = 1.2 eV
Concentration and bioavailability of toxic trace elements, germanium, and rare earth elements in contaminated areas of the Davidschacht dump-field in …